Memory array error correction apparatus, systems, and methods

ABSTRACT

Various embodiments include apparatus, methods, and systems that operate to extend the processes of reading, modifying, and writing data stored in or being provided to a memory array without interrupting a continual stream of data to be written into the memory array. Embodiments may include an apparatus comprising a memory array, and an error code module coupled to the memory array with a data buffer having a plurality of data burst registers operable to receive a plurality of data bursts to be written to the memory array on a corresponding plurality of consecutive clock cycles. The error code module is operable to perform a read/modify/write process on each of the plurality of data bursts within a time period no longer than a period of two consecutive cycles of the plurality of consecutive clock cycles.

CROSS REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. patent application Ser. No.13/086,137, filed Apr. 13, 2011, and issued as U.S. Pat. No. 8,181,086,which is a continuation of U.S. patent application Ser. No. 11/705,190,filed Feb. 12, 2007, and issued as U.S. Pat. No. 7,945,840. Theseapplications and patents are incorporated herein by reference, in theirentirety, for any purpose.

TECHNICAL FIELD

Various embodiments described herein relate generally to memory devices,including memory devices having error correction codes (ECC) associatedwith data stored in dynamic random access memory (DRAM).

BACKGROUND

Semiconductor memory devices are integrated circuits in whichinformation may be stored and from which information may be recalledwhen desired. Each memory device is built from a plurality of memorycells in which each memory cell has the capacity to store at least onebinary bit of data. Essentially, the cells are located at intersectionsof wordlines and bitlines (e.g., visualized as rows and columns of anarray). Cells may store a single bit of data as a logical “1” or alogical “0” and may sometimes be individually accessed or addressed.Cells may sometimes be addressed using two multi-bit numbers. When thisscheme is used, the first multi-bit number, or row address, may identifythe row of the memory array in which the memory cell is located. Thesecond multi-bit number, or column address, may identify the column ofthe memory array in which the desired memory cell is located. Each rowaddress/column address combination may correspond to a single memorycell.

Recalling data from memory arrays may not be perfectly accomplished inevery case. Thus, error detection and correction schemes may be used toenhance memory array data storage reliability. However, most errorcorrection schemes penalize overall operation of the array, perhaps interms of circuit real estate and/or operational speed. Therefore,improved mechanisms for error detection/correction are needed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a prior art DRAM memory cell;

FIG. 2 is a schematic diagram of a prior art simplified memory arraystructure;

FIG. 3 is a functional block diagram of a system according to variousembodiments of the invention;

FIG. 4 is an apparatus according to various embodiments of theinvention;

FIG. 5. is a timing diagram including waveforms according to variousembodiments of the invention; and

FIG. 6 is a flow diagram illustrating several methods according tovarious embodiments of the invention.

DETAILED DESCRIPTION

This document describes apparatus, methods, and systems that can be usedto extend the processes of reading, modifying, and writing data in amemory array without interrupting a substantially continual stream ofdata to be received and written into the memory array. Such memoryarrays may form a part of many different types of commercially availablememory devices, as noted below.

As disclosed in further detail below, in various embodiments a columncycle associated with memory operations is divided in two halves. Acolumn cycle refers to an operation, including but not limited to, awrite operation associated with a particular address.

A column refers to a group of memory cells coupled to a particular wordline that are selected when an address associated with the word line andan individual memory cell or a group of memory cells coupled to the wordline are selected by the application of the address to the column selectinput of the memory array.

A column cycle may include reading from or writing to one or a pluralityof memory cell locations within the memory array. The cells are selectedby the application of the address to the memory device containing thememory cells. The column cycle may be divided into a first half thatincludes a read, and a second half that includes a write. In variousembodiments, these two halves are spaced apart by another portion of acolumn cycle related to another address in the memory array. Thissplitting of the column cycle into two halves and spacing apart the twohalves by an intervening or interleaved portion of a column cycle from adifferent address allows error correction and check bit re-generation tooccur for the split column cycle data during the time the column cyclerelated to different address in the memory array is taking place.

Effectively, using this scheme, the read, modify, and write operationrelated to the data and check bits associated with the data and thefirst memory address is extended over three column cycles. In order forthis operation to not delay normal column access performance, one columncycle may be performed in half, or less than half of the time a non-ECCdesign would use in performing a normal write or read.

Modern memory devices may be constructed according to a variety ofoperational types, such as a DRAM, static random access memory (SRAM),video random access memory (VRAM), erasable programmable read onlymemory (EPROM), electrically erasable and programmable read onlymemories (EEPROMS), dynamic electrically alterable programmable readonly memory (DEAPROM), flash memory, and other semiconductor memorydevices

Each type of memory device has certain characteristics that dictate howthese various types of memory devices operate. For example, dynamicrandom access memory is categorized as a volatile memory device sincethe DRAM loses its stored data when the power supply is removed. Inaddition, DRAM is structurally simplistic as only one transistor and acapacitor are required to store each bit in the DRAM memory device.However, because a capacitor is not an ideal device and is subject toleakage, the DRAM memory requires that the capacitor charge be refreshedperiodically. The overhead dedicated to refresh operations is acceptablein many instances because of the very high density afforded by a DRAMmemory.

The following described embodiments of the invention are described asapplied to a DRAM memory structure. However, those skilled in the artwill readily recognize that various embodiments of the invention may bepracticed with a wide variety of memory types, including each of thosenamed above (e.g., SRAM, VRAM, etc.). The use of a DRAM memory design asa foundation for the discussion is by way of simplified illustrationonly, and not by limitation.

The charge in a DRAM memory cell is used to represent the value, andthus the data, stored in the memory cell. Over a period of time, thecharge in a DRAM memory cell will leak away, and the memory content maybe lost. Thus, DRAMs are periodically “refreshed” so they will not losethe data stored in the memory.

In refreshing the DRAM memory, a process is used that cycles through thememory cells and restores each memory cell to a charge representative ofthe value of the data bit stored in the memory cell. Various schemes maybe employed for this refreshing process, including dividing the memoryarray into blocks, wherein each of the blocks is refreshed at differenttimes. In other schemes, the entire memory array may be refreshed at thesame time. In the schemes where the memory is divided into blocks thatare refreshed at different times, which blocks have been refreshed, andhow long it has been since a block has been refreshed, is tracked. Thisis because the leakage of the charge maintained in the memory cellsoccurs at some rate, which may vary from memory cell to memory cell.After a certain period of time, the amount of leakage that has occurredin one or more of the memory cells may be such that the amount of chargein the memory cell now represents a different state than the original.In other words, the data bit has changed state due to leakage, the datais lost, and at least that portion of the data stored in the memory iscorrupt.

Since different bits within the memory cell leak at different rates, allcells are usually refreshed in a time that is less than the worst casebit in the memory array, as represented by the memory cell that willleak charge and change state in the least amount of time. Because therefresh process consumes power each time it is performed, the morefrequently the refresh process is performed, the more overall power thememory device will consume. Thus, if the refresh operation is performedat a time interval less than the worst case bit in the memory cell, anincrease in the overall power consumption of the memory device willoccur, as compared to a refresh time interval that is greater than thetime for the worst case memory cell to change state due to leakage.

In addition, during the time a refresh is being performed, reading fromand writing to the memory (or at least to the particular block or blocksof memory being refreshed) can not be performed. Thus, the memory (or atleast the portion thereof being refreshed) is not available for read orwrite operations. The refreshing of the DRAM memory represents lost timefor reading from and writing to the DRAM memory, and therefore imposedan overall performance penalty on the memory device. The less often therefresh is performed, the less the performance penalty imposed by therefresh requirements to the memory device.

In various embodiments, error correction codes may be used to detectcorruption of data due to leakage. When data is presented for storageinto the memory array, an error correction code is generated based onthe values present in the data to be stored. Various types of errorcorrection codes are known to those skilled in the art.

One type of error correction code is known as a Hamming code, which canbe generated for a plurality of data bits, and may later indicate if oneof the data bits has been altered. Hamming codes have the additionadvantage of being able to identify which one of the data bits in theplurality of data bits has a been altered. Use of Hamming codes thusallows correction of a particular bit within a given group of bits thathas been altered, allowing restoration of the given group of bits (witha single altered bit) to the original state of the data prior to thecorruption.

The number of bits required to form the Hamming code for a particularplurality of data bits depends on the number of individual bits in theplurality of data bits. Using Hamming codes as error correction codes, amemory device may be organized into the following data configurations,among many:

-   -   8 data bits and 4 check bits    -   16 data bits and 5 check bits    -   32 data bits and 6 check bits.

Using the 16 data bits and 5 check bits configuration as an example, aHamming code including 5 check bits may be generated for each group ofdata bits including no more than 16 data bits, and thus provide an errorcorrection code for each of these pluralities of data bits. The errorcorrection code may be stored in the memory array as additional bitsalong with the 16 data bits, for a total of 21 bits. In someembodiments, the 5 check bits may be stored in the next 5 memory cellsat the same memory location as the 16 data bits in the memory array. Insome embodiments, the 5 check bits may be stored, along with other errorcorrection codes for other data, in a part of the memory array separatefrom the area of the memory array where the data is stored. In variousembodiments, a separate address is generated for the error correctioncode, and is associated with the address where the data associated withthat error correction code is stored.

These configurations for data and associated check bits allow detectionand correction of instances where there is a failing of one bit in thedata bits. The array overhead for each of these data configurations asdescribed above is approximately 50 percent for the 8 data bits plus 4check bits configuration, approximately 31 percent for the 16 data bitsplus the 5 check bits configuration, and approximately 19 percent forthe 32 data bits plus 6 check bits configuration. The determination asto which data configuration may be used in any application of the memorydevice depends on various factors, such as die real estate site penalty,power penalty, and speed penalty (e.g., to read or write through thelogic used to perform the correction).

In various embodiments, the refresh cycle is performed within a timeinterval of no more than 64 milliseconds. In such embodiments, each bitof the memory needs to be refreshed within no more than 64 millisecondsfrom last time the bit was refreshed. Generally, at a refresh cycleinterval of 64 milliseconds, the refresh cycle interval may be less thanany one of the times for a worst case time of a memory cell in thememory array to be altered due to leakage. Therefore, in most casesthere may be little to no use of the error correction codes to detectand change corrupted data.

However, for a large number of bits included in memory, for example aone giga-byte memory, only a small fraction of the memory cells willactually have a leak rate such that a change in the state of the datastored at the memory cell occurs within the given refresh cycle intervalof 64 milliseconds. The distribution of the actual times for each of thememory cells in the one giga-byte memory to leak charge to the pointwhere the value stored in the memory cell would change state may berepresented by a distribution including a tail. The tail of thedistribution may begin near a time period at or greater than 64milliseconds. However, the portion of the total bits included in thedistribution at the time period between just over 64 milliseconds and upto a time period of 128 milliseconds may be a small percentage of thetotal number of memory cells in the memory array. In variousembodiments, the number of memory cells included in the tail of thememory distribution between 64 milliseconds and up to 128 millisecondsmay be less than one percent of the total memory cells included in thememory array.

In addition, the number of data bits that may be grouped together andstored as data bits associated with the same error correction code andexperiencing two or more memory cells within that data group where thenumber of data bits is stored that would change state due to leakage(e.g., two or more corrupt cells) in less then the 128 millisecondsrefresh time interval is one or more magnitudes less than the onepercent figure for the single bit error rate described above.

In smaller data groups (e.g., an 8 data bit group plus the 4 checkbits), the probability of having two bad data bits in that particulargroup are less than the probability of having two bad data bits in alarger data group (e.g., a group including 16 data bits). Similarly, theprobability of having two bad bits in a single data group is less in a16-bit data group than there would be in a still larger data group, forexample in a 32-bit data group. In various embodiments, the refresh timefor an 8 data bit group with 4 check bits may be up to and including a700 millisecond refresh cycle time interval, and for a 32 data bit groupwith 6 check bits, a 600 millisecond refresh cycle time interval may beused.

In various embodiments, the refresh time intervals for the locations inthe memory array storing the error correction codes may be less thanthat used as the refresh time interval used to refresh the locations inthe memory array storing the data bits. In some embodiments, the memorycells in the memory array storing the error correction codes may berefreshed using a 64-millisecond time interval, while the memory cellsin the memory array storing the data bits may be refreshed at a timeinterval longer than 64 milliseconds.

By using Hamming codes, or other error correction codes associated withdata stored in a memory array, the refresh time interval may beincreased. In these embodiments, the area penalty imposed by the addedcheck bits is offset by the power savings allowed by the extension ofthe refresh cycle times. The extended refresh time interval reduces thenumber of refresh cycles performed to maintain the data in the memoryand thus decreases the memory device power consumption. In addition,because the time during which the refresh cycle occurs is timeunavailable for read and write operations of the memory, the lessfrequent need to perform the refresh operation leaves more overall timeavailable for read and write operations to and from the memory,resulting in improved overall performance of the memory device.

Another factor that affects the overall performance of the memory deviceis the clock rate at which the memory device operates. In many cases, afaster clock rate allows read operations and write operations to andfrom the memory to be performed faster than when a slower clock rate isused. However, certain processes, including operations involving thegeneration of error correction codes for data to be written to thememory, and operations involving masking data to be written to thememory array, may slow down overall memory operational speed. Onealternative may be to slow the clock rate so that the column cycle timeis slow enough to allow additional operations, including errorcorrection code generation, to be performed. However, slowing the clockrate may increase the overall time required to perform read and writeoperations to and from the memory, and thus decrease the overallperformance and speed of the memory device.

Embodiments described herein provide systems, apparatus, and methodsthat may permit operations, including error correction code generationfor the groups of data bits, and data masking, or both, to be performedat clock rates as fast as those used for read and write operations thatdo not include these additional processes.

Embodiments may include double rate memory devices, which are memorydevices that take in data on both the rising edge and the falling edgeof the clock pulse controlling data transfer. In various embodimentsincluding double rate memory devices, data taken in on a rising edge ofthe clock pulse is written to one part of the memory array included in amemory device, and data taken in on the falling edge of the clock pulseis written to a different part of the memory array. In variousembodiments, the data taken in on both the rising edge and on thefalling edge of the clock pulse is stored into one or more buffers andthen is written to the memory array at the same time.

Embodiments may include a single rate memory device. Single rate memorydevices take in data on either a rising edge or a falling edge of aclock pulse, but not both.

In various embodiments, data is received for writing to a memory arrayat a rate of 5 nanoseconds per group of data bits.

FIG. 1 is a prior art DRAM memory cell or memory bit schematicallyillustrated generally at 20. Memory cell 20 comprises an accesstransistor 22 and a capacitor 24. Memory cell 20 is capable of holdingbinary information in the form of stored charge on capacitor 24.Transistor 22 operates as a switch coupled between capacitor 24 and adigitline 26. Capacitor 24 includes a common node which is biased atapproximately Vcc/2 or at the cell plate voltage. The gate that controlsthe switching action of transistor 22 is coupled to a wordline 28. Alogic ONE binary value is stored in memory cell 20 with a plus Vcc/2charge across capacitor 24. A logic ZERO binary value is stored inmemory cell 20 with a minus Vcc/2 charge across capacitor 24. Thus, anode 30, representing the connection between transistor 22 and capacitor24, is at a potential approximately equal to Vcc when a logic ONE valueis stored in memory cell 20 and is at approximately zero or ground levelpotential when a logic ZERO value is stored in memory cell 20.

Memory arrays in DRAMs are formed by tiling a large number of memorycells 20 into a memory array structure 32 as schematically illustratedin prior art FIG. 2. In memory array structure 32, the memory cellsalong a given digitline (D0, D1, D2, or D3) do not share a commonwordline (WL0, WL1, WL2, or WL3) and memory cells along a commonwordline do not share a common digitline. The simplified diagram ofmemory array structure 32 in FIG. 2 is for illustrative purposes only toshow how one transistor/one capacitor memory cells may be employed in anarray structure that is easily scaled. Although the design of the DRAMmemory cells and memory arrays may appear simple, their actual designand implementation are highly complex.

FIG. 3 is a functional block diagram of a system 300 according tovarious embodiments of the invention. In some embodiments, the system100 may comprise a personal digital assistant 330, a camera 102, or acellular telephone 134. In various embodiments, camera 102 may be adigital camera.

System 300 includes the major components of a memory device, such as aDRAM 301. System 300 may include a processor 326 coupled to the DRAM301. In various embodiments, system 300 includes a display 350, which insome embodiments may be coupled to processor 326. The description of thememory device of FIG. 3 has been simplified for purposes of illustratinga DRAM memory device incorporating the invention and is not intended tobe a complete description of all the features of a memory device. Asnoted above, other memory devices structures may be readily substitutedfor the DRAM 301.

Address information to the DRAM 301 is provided on address lines 302,data information is provided on data lines 304, and control input isprovided on a variety of control lines 305 directed to a control logic306. In some embodiments, data masking information associated with thedata information is provided on data mask inputs 328.

The DRAM 301 includes a memory array 310 which in turn comprises rowsand columns of addressable memory cells. Each memory cell in a row iscoupled to a common wordline, as illustrated by lines WL1-WLn 315.Additionally, each memory cell in a column is coupled to a commonbitlines, as illustrated by lines BL1-BLn 317. Each cell in the memoryarray 310 includes a storage capacitor and an access transistor, and mayinclude a number of memory subarrays.

The DRAM 301 may be coupled to, for example, the processor 326, throughaddress lines 302 and data lines 304, and data mask inputs 328.Alternatively, DRAM 301 may be coupled to a DRAM controller, amicro-controller, a chip set or other electronic system. The processor326 also provides a number of control signals to the DRAM 301 via thecontrol lines 305, including but not limited to, row and column addressstrobe signals RAS(bar) and CAS(bar), write enable signal WE(bar), anoutput enable signal OE(bar), a clock signal 307, and other controlsignals. In various embodiments, processor 326 includes a clock circuit303 that provides the clock signal 307. In FIG. 3, the “bar” designationand the line over the labels (e.g., OE, WE) for these signals indicatesthat a low logic level equates to an “ON” state. Embodiments are notlimited to the use of “bar” signals to indicate an ON state, and anytype signals, including but not limited to the inverse of the “bar”signals, may be used in place of the signals as shown in FIG. 3.

A row address buffer 312 and a row decoder 314 receive and decode rowaddresses from row address signals provided on address lines 302 by, forexample, the processor 326. Each row address corresponds to a row ofcells in the memory array 310. The row decoder 314 includes a wordlinedriver, an address decoder tree, and circuitry that translates a givenrow address received from the row address buffer 312 and selectivelyactivates the appropriate wordline of the memory array 310 via thewordline drivers.

A column address buffer 316 and a column decoder 318 receive and decodecolumn address signals provided on the address lines 302 by theprocessor 326. Each column address corresponds to a column of cells inthe memory array 310. The column decoder 318 is coupled to senseamplifiers 320. In various embodiments, the column decoder 318 iscoupled to the sense amplifiers 320 through a plurality of column selectlines 319. The sense amplifiers 320 are coupled to bitlines of thememory array 310.

The sense amplifiers 320 are coupled to an error code module 340. Invarious embodiments, error code module 340 provides data to senseamplifiers 320 through connection 330, and receives data from senseamplifiers 320 through connection 332. Error code module 340 is coupledto the address lines 302 and to the data lines 304. In some embodiments,error code module 340 is coupled to data mask inputs 328. During a writeoperation, the data lines 304 provide data to the error code module 340.The sense amplifier 320 receives data from the error code module 340,and stores the data in the memory array 310 as a charge on a capacitorof a cell at an address specified on the address lines 302.

During a DRAM read operation, the DRAM 301 transfers data to processor326 from the memory array 310. Complementary bitlines for the accessedcell are equilibrated during a precharge operation to a referencevoltage provided by an equilibration circuit and a reference voltagesupply. The charge stored in the accessed cell is then shared with theassociated bitlines. A sense amplifier included in the sense amplifiers320 detects and amplifies a difference in voltage between thecomplementary bitlines. The sense amplifier passes the amplified voltageto the error code module 340.

The control logic 306 can be used to control the many availablefunctions of the DRAM 301. In addition, various control circuits andsignals not detailed herein may be initiated and synchronize the DRAM301 operation as known to those skilled in the art. As stated above, thedescription of DRAM 301 has been simplified for purposes of illustratingvarious embodiments of the invention and is not intended to be acomplete description of all the features of a DRAM. Similarly, anymention of other memory structures herein is used to note their use as asubstitute for the DRAM 301, and those of ordinary skill in the art willknow of the standard operational features for these substitutestructures.

Bitlines BL1-BLn are used to write to and read data from the memorycells within the memory array 310. The wordlines WL1-WLn are used toaccess the row of memory cells that is to be written or read. The rowdecoder 314 and the column decoder 318 selectably access the memorycells in response to address signals provided on the address lines 302from the processor 326 during write and read operations.

In operation, the DRAM 301 receives an address of a particular memorycell at the error code module 340. For example, the processor 326 mayprovide the address buffers 312 and 316 with the address for aparticular cell within the memory array 310. The row address buffer 312identifies wordline WL1, for example, for the appropriate memory cell tothe row decoder 314. The row decoder 314 selectively activates thewordline WL1 to activate an access transistor of each memory cellconnected to the wordline WL1. The column address buffer 316 identifiesbitline BL1, for example, for the appropriate memory cell to the columndecoder 318. The column decoder 318 selectively connects a particularsense amplifier to the I/O (input/output) bitlines for read or writepurposes.

In various embodiments, a plurality of cells, for example the cellscoupled to a particular wordline and a plurality of bitlines, forexample bitlines BL1-BLn, will be included in an address received onaddress lines 302. The number of bits in the plurality of bits is notlimited to any particular number of bits and may include, for example, 8bits, 16 bits, or 32 bits. In various embodiments, the data provided ondata lines 304 and associated with the address provided on the addresslines 302 may include the same number of bits as the number of memorycells addressed by the address provided on address lines 302 when thedata bits are provided.

In various embodiments, a provided address will select a number ofmemory cells that is greater than the number of data bits provided inthe data associated with the provided address. In these instances, theadditional number of selected memory cells may address memory cells inmemory array 310 where an error correction code, including one or morebits, and that is associated with the data stored or to be stored in thememory array 310, is located.

In various embodiments, a set of data masks is provided to the errorcode module 340 on data mask inputs 328. The set of data masks may beassociated with data provided on the data lines 304, wherein the dataprovided on data lines 304 and associated with the set of data masks isdata to be written to memory array 310.

FIG. 4 illustrates an apparatus 400 including error code module 340. Invarious embodiments, error code module 340 includes data buffer 402,error code computation unit 430, and data combiner 434. Data buffer 402may be coupled to error code computation unit 430 by connection 432. Invarious embodiments, data buffer 402 may include a plurality of databuffers and registers including, but not limited to: read data register410, modified data register 412, error correction code register 414,read error correction code register 416, input data buffer 418, andoutput data buffer 420. These registers and buffers are not limited toany particular type of register or any particular type of buffer, or toany particular length or number of bits. Embodiments are not limited tohaving a particular register or buffer size for any of the registers andbuffers included in data buffer 402, and may include registers andbuffers having different sizes.

In various embodiments, error code module 340 includes a clockgeneration circuit 403. In some embodiments, clock generation circuit403 receives a clock signal, such as clock signal 307, and generates oneor more additional clock signals. In some embodiments, clock generationcircuit 403 generates a clock signal that is about twice the cycle rateof the received clock signal 307. In various embodiments, clockgeneration circuit 403 provides a clock signal used to operate thecolumn cycles as described in further detail herein. Various embodimentsinclude a clock circuit coupled to the processor and operable togenerate the plurality of consecutive clock cycles, and a half-cycleclock generation circuit coupled to the clock circuit and to the errorcode module, the half-cycle clock generation circuit operable togenerate a plurality of consecutive clock cycles at a rate of abouttwice a rate of the clock circuit.

Data buffer 402 may be coupled to data combiner 434 through connection436. In various embodiments, error code module 340 is coupled to addresslines 302, data lines 304, and data mask inputs 328.

Within data buffer 402, the content stored in any of the registers orbuffers included in data buffer 402 may be transferred between any otherregister or buffer included in data buffer 402, either internally withindata buffer 402, or externally, outside data buffer 402. in variousembodiments, buffers such as input data buffer 41B and output databuffer 420 include input buffers and driver circuitry to provide thecapability to receive and to send data to one or more connections todata buffer 402, including but not limited to, address lines 302, datalines 304, data mask inputs 328.

In various embodiments, the registers within data buffer 402 includecircuitry to allow the registers to receive data from and to providedata to any memory array, for example memory array 440, to which thedata buffer 402 is coupled.

In various embodiments, error code module 340 is coupled to a globalread I/O 452 and a global write I/O 450. Global read I/O 452 and globalwrite I/O 450 are not limited to any particular type of I/O and mayinclude any I/O usable to connect to error code module 340. In variousembodiments, global read I/O 452 and global write I/O 450 couple errorcode module 340 to a plurality of local I/O 446(a-n). Local I/O 446(a-n)represents a plurality of local I/O. Local I/O 446(a-n) may include anynumber of local I/O. Each one of local I/O 446(a-n) may include aplurality of individual signal lines. Local I/O 446(a-n) is not limitedto having each local I/O included in local I/O 446(a-n) having the samenumber of individual signal lines.

In some embodiments, one or more of local I/O 446(a-n) includes a readinterface 447. Read interface 447 includes an interface for coupling thelocal I/O signal lines in a particular local I/O 446(a-n) to the globalread I/O 452 lines. Read interface 447 is shown in FIG. 4 as 447(a) and447(n), wherein the letter designation indicates a match of the letterdesignation of the particular local I/O 446(a-n) in which the particularread interface 447 is included. In some embodiments, one or more oflocal I/O 446(a-n) includes a write interface 448. Write interface 448includes an interface for coupling the local I/O signal lines in aparticular local I/O 446(a-n) to the global write I/O 450 lines. Writeinterface 448 is shown in FIG. 4 as 448(a) and 448(n), wherein theletter designation indicates a match of the letter designation of theparticular local I/O 446(a-n) in which the particular write interface448 is included.

In various embodiments, sense amplifiers 444 include a plurality ofsense amplifiers coupling the local I/O 446(a-n) to the memory array440. In various embodiments, an ECC code sector 442 may be included inthe memory array, and coupled to one or more of the local I/O 446(a-n)through sense amplifiers 444. In various embodiments, an errorcorrection code associated with at least one piece of data stored in thememory array may be stored in the ECC code sector 442. In variousembodiments, one or more error correction codes associated with datastored in the memory array 440 may be included in the memory array 440with each of the data stored in the memory array 440. In variousembodiments, these one or more error correction codes are stored in theECC code sector 442 of the memory array 440.

In various embodiments, memory array 440 may be coupled to wordlinesWL1-WLN 315. In various embodiments, sense amplifiers 444 may be coupledto column select lines 319. In some embodiments, wordlines WL1-WLN 315and column select lines 319 may be used to control the reading of datafrom and the writing of data to memory array 440. In variousembodiments, the reading and writing includes reading from the memoryarray and the writing to the memory array of one or more errorcorrection codes. In various embodiments, error code module 340 maycontrol the reading and writing operations of memory array 440 byproviding addresses on address lines 302, by providing data on datalines 304, or both.

In operation, error code module 340 may receive data on data lines 304,the data to be written into memory array 440. An address where thereceived data is to be stored is received on address lines 302. One ormore data mask settings associated with the received data may bereceived on data mask inputs 328. Data mask settings may include anindication associated with each of a plurality of portions of thereceived data, the data mask settings indicating for each of theplurality of portions of the received data, whether a mask for thatparticular portion of the received data has been set.

By way of example, data received on data lines 304 may include 32 bitsof data and 4 data mask inputs may be received on data mask inputs 328,wherein each of the data mask inputs indicates a data mask setting forone particular byte (8 bits) of the 32 bits. Embodiments are not limitedto any particular number of data bits and are not limited to anyparticular number of data mask inputs for any given number of bitsincluded in the input data. Mask bits may represent data bits, bytes,words, double-words, and other partitions of the data, as desired.

Returning to FIG. 4, in various embodiments the received data may bestored in the input data buffer 418. In various embodiments, the addressto which the received data is to be written in the memory array 440 mayalso be stored in input data buffer 418. Based on the received address,the error code module 340 may read from the memory array the datacurrently stored at the received address into the read data register410. The reading of the stored data may occur over the global read I/O452 lines, and over the local I/O 446 lines associated with the senseamplifiers and the memory array 440 selected by the received address. Insome embodiments, an error correction code stored with the read datawill also be read and stored in read data register 410. In embodimentsincluding a separate error code sector, such as ECC code sector 442, anerror correction code associated with the data read from the memoryarray 440 will be read from error code sector and may be stored in readdata register 410.

In various embodiments, after receiving the stored data and the errorcorrection code at read data register 410, the error code computationunit 430 may compare the read data to the read error correction codeassociated with the read data, and will determine if an error hasoccurred in the data. If an error has occurred and can be correctedbased on the error correction code, the error code computation unit 430will provide a correct set of data bits representing the corrected readdata to the read data register 410.

In various embodiments, a second set of data bits to be stored intomemory array 440 may be received on the data lines 304, including anaddress where the second set of data bits are to be stored at theaddress received on address lines 302. In addition, a set of data maskinputs may be received on data mask inputs 328, the set of data maskinputs including data mask settings for the received second set of databits. The received second set of data bits, along with the associatedaddress and the associated data mask inputs, may be stored in input databuffer 418. Storing the second received set of data bits, along with theassociated address and the associated data mask inputs may be storedinto input data buffer 418 without removing or affecting any dataalready stored in input data buffer 418.

In various embodiments, during the time the second data is received, butbefore the second data is written to the memory array, aread/modify/write process may be performed on the first set of receiveddata. In various embodiments, a reading of the data presently stored inthe memory array 440 at the address associated with the second receiveddata may also be performed during the time the read/modify/write processis being performed on the first set of received data bits, as describedin more detail in below.

In various embodiments, the read/modify/write process includes the datacombiner 434 combining the data stored in the read data register 410associated with the address received for writing the first received databits with the data stored in the input data buffer 418 associated withthe received first set of data bits. The stored data from the read dataregister 410 associated with the address of the received first set ofdata bits may have already had the stored data corrected using thestored error correction code, as described previously. Data combiner 434may combine the stored data from the read data register 410 with thestored data from the input data buffer 418 based on the data masksettings associated with the received first set of data bits. The datamask settings may include a status for each of a plurality of portionsof the stored received first set of data bits, the status indicatingwhether the set of data bits actually written to memory array 440 willinclude in each portion the data bits received in the first set of databits, or the data bits already stored in memory array 440.

By way of example, the received set of data bits stored in the inputdata buffer 418 may include 32 bits total, including four portionsrepresenting 8 bits of the 32 total bits. Data mask inputs may include 4bits, each of the 4 bits associated with a particular one of the 8-bitportions of the 32 bits. Each of the 4-bit data mask inputs includes aindication as to whether the particular 8-bit portion of the 32 totalbits associated with the particular data mask input is to be masked, oris not to be masked. An indication is not limited to any particular typeof indication. In various embodiments, the indication is a binary value,for example a binary 1 or a binary 0, wherein the value of theindication determines whether the particular 8-bit portion of the 32total bits is to be masked or is not to be masked. In variousembodiments, a 1 on a data mask input indicates a mask has been set fora particular portion of the 32 total bits, and a 0 on a data mask inputindicates that a mask has not been set for a particular portion of the32 total bits. Other combinations are possible.

In various embodiments, an indication of a mask being set for aparticular portion of a plurality of data bits means that rather thanusing a portion of the data bits received in the plurality of data bitsto write to the memory array, the portion of the data bits alreadystored in the memory array are to be re-written into the memory arrayfor that portion of the plurality of data bits written to the receivedaddress. For portions of the plurality of data bits for which a datamask input includes a value indicating that the portion of the pluralityof data bits is not to be masked, the data bits written to the memoryarray for that portion of the plurality of data bits are to include thedata bits received in the received set of data bits.

In various embodiments, such as the example above including 32 totaldata bits and data mask inputs for the four 8-bit portions of the totaldata bits, the operation is referred to as a “byte-write” because one ormore bytes included in the total data bits to be written to a givenaddress in the memory array may be masked on a byte-by-byte basis. Itshould be understood that masking of data to be written to the memoryarray is not limited to masking a particular number of bits to a givenportion of the total bits. Rather, masking may include masking anynumber of bits of the total bits, including but not limited to maskingeach one of the total number of bits on an individual bit-by-bit basis.

Again referring to FIG. 4 and the read/modify/write operation, datacombiner 434 completes a modification of the first set of data bitsbased on the state of the data mask inputs associated with the first setof data bits. The modified first set of data bits includes the receivedfirst set of data bits, which may be combined with one or more portionsof the first set of data bits stored in the read data register 410 asdictated by the received data mask inputs for the first received set ofdata bits, the masking being conducted as described above.

The modified first set of data bits may be stored in the modified dataregister 412. After the modified first set of data bits has beengenerated, error code computation unit 430 may generate an errorcorrection code associated with the modified first set of data bits, thegenerated error correction code based on the data bits as provided inthe modified first set of data bits. In some embodiments, the generatederror correction code associated with the modified first set of databits may be stored in the error correction code register 414. In someembodiments, the generated error correction code associated with themodified first set of data bits may be added to the data bits includedin the modified first set of data bits, forming a plurality of data bitsincluding the modified first set of data bits and the associated errorcorrection code for the modified first set of data bits. In variousembodiments, this plurality of data bits including the modified firstset of data bits and the associated error correction code for themodified first set of data bits may be stored in the modified dataregister 412.

Once the modified first set of data bits and the associated errorcorrection code for the modified first set of data bit has beengenerated, the modified first set of data bits and the associated errorcorrection code maybe written to the memory array 440. In variousembodiments, the modified first set of data bits and the associatederror correction code are provided by error code module 340 to globalwrite I/O 450, along with the associated address where the providedmodified first set of data bits is to be written within the memory array440. In various embodiments where the associated error correction codeis to be written to a different part of the memory array, for exampleECC code sector 442, the address where the associated error correctioncode is to be written may also be provided by error code module 340 toglobal write I/O 450.

In various embodiments, global write I/O 450 may provide to one or morelocal I/O 446 (a-n) the first set of data bits and the associated errorcorrection code to be written to the memory array 440. In variousembodiments, global write I/O 450 may provide the first set of data bitsto one or more write interfaces 448(a-n) for writing of the first set ofdata bits to memory array 440. In various embodiments, global write I/O450 will provide the associated error correction code to a different setof write interfaces 448(a-n) than was used to write the first set ofdata bits, and the different set of write interfaces 448(a-n) may beused for writing the associated error correction code to memory array440. In various embodiments, the local I/O 446(a-n) used for the writingoperation is determined by the particular local I/O 446(a-n) coupled tothe locations in memory array 440 that are addressed by the addressprovided by the error code module 340 in the write operation.

It should be understood that various embodiments may not include globalread I/O 452 and global write I/O 450, wherein the local I/O 446(a-n)may be directly coupled to error code module 340. In some embodiments,local I/O 446(a-n) may receive the modified sets of data bits and theassociated error correction codes directly from the error code module340. In various embodiments, the address associated with the modifiedset of data bits determines which of the local I/O 446(a-n) may be usedin performing the write operation of the modified set of data bits andthe associated error correction code.

In various embodiments, a read portion of the read/modify/write processfor the received second set of data bits may be performed before thewriting of the modified first set of data bits (and the associated errorcorrection code for the modified first set of data bits) is performed.

By performing the read portion of the read/modify/write operation forthe received first set of data bits, and then performing the readportion of the read/modify/write operation for the received second setof data bits before performing the write operation for the receivedfirst set of data bits, additional time may be provided for performingthe modify part of the procedure on the received first set of data bitsbefore writing the resulting modified first set of bits to the memoryarray.

Thus, by interleaving the read/modify/write operations associated withthe first set of data bits with the read/modify/write operationsassociated with the second set of received data bits, the rate at whichthe data bits may be received can be increased while still providing anadequate time period to process each of the received data sets throughthe read/modify/write process. In various embodiments, thisread/modify/write process includes reading the data already stored atthe associated address, checking the read data against the stored errorcorrection code associated with read data, and if necessary, correctingthe read data based on the stored error correction code associated withthe read data. In various embodiments, the read/modify/write processincludes modifying the read data bits based on one or more status valuesreceived as data mask inputs associated with the received data bits. Invarious embodiments, the read/modify/write process includes generationof an error correction code based on the modified set of data bitsgenerated as a result of the data masking.

In various embodiments, reading the stored data associated with thereceived second set of data bits from the memory array 440 may befollowed by a write operation of the modified first set of data bits tothe memory array 440, reading a third set of stored data bits associatedwith a received third set of data bits from the memory array 440, andthen writing the modified set of data bits associated with the receivedsecond set of data bits to the memory array 440, as further describedwith respect to FIG. 5. In various embodiments, the modify and errorcorrection code generation process is performed for the received secondset of data at some time after reading the stored data associated withthe received second set of data is performed, while the write operationof the modified first set of data bits is performed, and while a readoperation of the data stored in the memory array associated with thethird set of data is also performed. This interleaving of operationsrelated to different sets of received data may be repeated for anynumber of sets of received data.

By interleaving the read/modify/write operations, an apparatus such asapparatus 400, including error code module 340, provides the capabilityto receive sets of data to be written to a memory array at a rapid rate,while still performing error correction on either the read data, on thegenerated data, or both, as well as performing data masking operations,as described herein.

FIG. 5. is a timing diagram of waveforms 500 according to embodiments ofthe present invention. Waveforms 500 may be included in the system asshown in FIG. 3. Waveforms 500 may be included in an apparatus as shownin FIG. 4. Waveforms 500 as shown in FIG. 5 include a clock signal 502,a WE(bar) (e.g., WE) signal 504, a data signal 506, an address signal508, and a data mask input signal 510. Waveforms 500 as shown in FIG. 5include column select signal 520, local I/O (LI/O) signal 522, globalread I/O (GRI/O) signal 524, and global write I/O (GWI/O) signal 526.

In various embodiments, clock signal 502 may include the clock signal307 as shown in FIG. 3. In various embodiments, clock signal 307 may beprovided by a clock generation circuit 303. In various embodiments, theWE(bar) signal 504 may be similar to or identical to the WE(bar) signalas shown in FIG. 3. In various embodiments, the data signal 506 may beprovided to the error code module 340 over data lines 304 as shown inFIG. 3 and FIG. 4. In various embodiments, address signal 508 may beprovided to the error code module 340 over address lines 302 as shown inFIG. 3 and FIG. 4, the data mask input signal 510 may be provided overthe data mask inputs 328 shown in FIG. 3 and FIG. 4, and the columnselect signal 520 may be provided over the column select lines 319 asshown in FIG. 3 and FIG. 4. In various embodiments, the LI/O signal 522may be provided on one or more of the local I/O 446(a-n) as shown inFIG. 4, the GRI/O signal 524 may be provided on global read I/O 452 asshown in FIG. 4, and the GWI/O signal 526 may be provided on globalwrite I/O 450 as shown in FIG. 4.

Again referring to FIG. 5, time periods (a), (b), (c), (d), (e), (f),(g), (h), (i), (j), (k), (l), (m), (n), (o), and (p) are shown. Each ofthese time periods (a) through (p) occur at about the time of thetransition of the clock signal 502. Clock signal 502 is not limited toany particular cycle time, and so the time between time periods (a)through (p) is not limited to any particular amount of time.

In various embodiments, data received and that is to be written into thememory array may be referred to as data bursts. A data burst may referto the data, for example but not limited to D0, that arrives at theerror code module at a particular time. A data burst may include dataand an address associated with the data. In some embodiments, an addressassociated with the data burst may include an address associated with alocation where an error correction code associated with the data may bestored. In some embodiments, a data burst may include data mask inputs.

At about time period (a), the transition of clock signal 502 occurswhile the WE(bar) signal 504 is pulsed. In various embodiments, thiscombination of signals indicates that data is to be written into thememory array. At about time period (a), data represented as “D0” isprovided on data signal 506, an address “ADD0” associated with “D0” isprovided on address signal 508, and data mask inputs “MASK0” associatedwith “D0” are provided on data mask input signal 510. ADD0 is associatedwith D0 in that ADD0 includes the address into which data D0 is to bestored. In some embodiments, ADD0 may include an address where an errorcorrection code for D0 is to be stored. In various embodiments, ADD0 mayinclude an address selecting a portion of the memory array where anerror correction code associated with the data already stored at thelocation in the memory array addressed by a data portion of ADD0included in ADD0 is located in the memory array.

At about time period (b), a transition of clock signal 502 occurs whiledata signal 506 provides data “D1” and address signal 508 providesaddress “ADD1” associated with data D1, and data mask input signal 510provides data mask inputs “MASK1” associated with data D1. Any of thesesignals may or may not be provided at this time period (b), as desired.

In various embodiments, data D0 and D1, address A0 and A1, and data maskinputs MASK0 and MASK1 may be stored in input data buffers, includingbut not limited to the input data buffers 418 as shown in FIG. 4. Invarious embodiments, waveforms 500 are operable in a double data ratedevice, as previously described, and therefore data D0 and D1 areprovided on consecutive transitions of the clock signal 502, and areprocessed together. Embodiments are not limited to double data ratedevices, and in some embodiments, data are provided on a single data bysingle data basis and are processed on an individual basis as describedbelow for the D0 and D1 data.

At about time period (c), a transition of clock signal 502 occurs whiledata signal 506 provides data “D2” and address signal 508 providesaddress “ADD2” associated with data D2, and data mask input signal 510provides data mask inputs “MASK1” associated with data D2. Any of thesesignals may or may not be provided at this time period (c), as desired.

Also at about time period (c), column select signal 520 provides asignal to initiate a read from the memory array of the data presentlystored in the memory array at the data portions of the addresses includein ADD0 and ADD1. In some embodiments wherein ADD0 and ADD1 includeadditional addresses indicating locations in the memory array whereerror correction codes associated with the data location included indata portion of ADD0 and ADD1 are stored, these error correction codeswill also be read by addresses provided by column select signal 520.

In various embodiments, the signals provided on column select signal 520may be applied to the memory array, resulting in data being read fromthe memory locations indicated by the ADD0 and ADD1 addresses. Invarious embodiments, this read data may be provided by the LI/O signal522 at about time period (c). This is shown as “DR 0,1” on LI/O signal522 beginning about time period (c). In embodiments that include globalread I/O lines, the read data may be provided by the LI/O signal 522 tothe GRI/O signal 524 at about time period (c) as shown as the DR 0,1″ onGRI/O signal 524 beginning at about time period (c). In variousembodiment the global read I/O lines are gated to local I/O lines sothat any signals provided on LI/O signal 522 are available on GRI/Osignal 524, less any delays present in the gating circuits, as would beunderstood by one of ordinary skill in the art.

In various embodiments, reading the data stored in the memory arrayindicated by addressed ADD0 and ADD1 beginning at about time period (c)and including the time between time period (c) and (d), represents theread portion of the read/modify/write process performed on data D0 andD1. In various embodiments, during a time period beginning after thedata has been read, and up to about time period (f), the modify portionof the read/modify/write process may be performed on data D0 and D1. Themodify portion may include any of the processes described above withrespect to the error code module providing the data to be written intothe memory array, including but not limited to, performing errorcorrection on the initially read data from the memory array, combiningreceived data with the read data using the data mask inputs, andgenerating an error correction code for the received data, or for acombination of the received data and the read data.

As shown in FIG. 5, and as described above, at about time period (c)additional data, address information, and data masks including data D2,associated addresses ADD2, and associated data mask inputs MASK2 areprovided on data signal 506, address signal 508, and data mask inputsignal 510 respectively. At about time period (d), additional data,address information, and data masks including data D3, associatedaddresses ADD3, and associated data mask inputs MASK3 are provided ondata signal 506, address signal 508, and data mask input signal 510respectively. In various embodiments, the processing of data D2 and D3may be done together, in a fashion similar to that described above withrespect to data D0 and D1.

The additional data, address information, and data masks concerning dataD2 and D3 may be received while the read and the modify processesdescribed for data D0 and D1 are being preformed. In variousembodiments, the data D2 and D3, along with the associated addressesADD2 and ADD3, and associated data mask inputs MASK2 and MASK3 may bestored in an input data buffer, including but not limited to, the inputdata buffer 418 of error code module 340.

As shown in FIG. 5 at about time period (e), data D2 and D3, and theassociated addresses and data mask inputs for D2 and D3 have beenreceived, and column select signal 520 provides a “read 2,3” signal. Theread 2,3 signal results in reading from the memory array the data storedat ADD2 and ADD3. The data may be provided over LI/O signal 522, asshown for LI/O signal 522 beginning at about time period (e). Readingthe data at ADD2 and ADD3 may happen while the modify process withrespect to data D0 and D1 occurs, and before the resulting dataassociated with D0 and D1 has been written to the memory array. Thus,additional data D2 and D3 is received, and the initial processingincluding the read portion of the read/modify/write process is performedon additional data D2 and D3 before the data associated with the D0 andthe D1 data is written to the memory array.

In various embodiments, at about time period (e) additional data,addresses, and data masks including data D4, associated addresses ADD4,and associated data mask inputs MASK4 are provided on data signal 506,address signal 508, and data mask input signal 510 respectively. DataD4, address(es) ADD4, and data mask inputs MASK4 may be stored in aninput data buffer, including but not limited to, the input data buffer418 of error code module 340.

Returning the FIG. 5, at about time period (f), the read and the modifyportion of the read/modify/write process related to data D0 and D1 hasbeen competed, and the data to be written to the memory array ataddresses ADD0 and ADD1 are provided to the memory array using the“write 0,1” signal on column select signal 520. In various embodiments,the data to be written to the memory array at address ADD0 and ADD1 isprovided as the “DW 0,1” signal on LI/O signal 522 beginning at abouttime period (f). In various embodiments, the DW 0,1 signal may beprovided to the LI/O signal 522 by the GWI/O signal 526, as shownbeginning at about time period (f) on the GWI/O signal 526.

In various embodiments, during the time the write operation involvingthe data associated with the D0 and D1 is being written to the memoryarray, the modify portion of the read/modify/write process associatedwith the D2 and the D3 data may also be performed.

At about time period (f), data D5 and associated address ADD5 andassociated data mask inputs MASK5 are provided.

At about time period (g), column select lines provide a “read 4,5”signal, causing the data stored at ADD4 and ADD5 of the memory array tobe read. As shown in FIG. 5, this reading associated with ADD4 and ADD5occurs during at time period of only one half of a cycle of clock signal502 following the writing of the data associated with data D0 and D1 tothe memory array, and following the read associated with data D2 and D3.Thus, at about time period (g), a read of data associated with D4 and D5is beginning while the reading of data associated with data D2 and D3has occurred, and the modification of data associated the D2 and D3 maybe occurring, and before the writing of the data associated with data D2and D3 has occurred.

At about time period (h), the read and the modify portion of theread/modify/write process related to data D2 and D3 has been completed,and the data to be written to the memory array at addresses ADD2 andADD3 are provided to the memory array using the “write 2,3” signal oncolumn select signal 520. In various embodiments, the data to be writtento the memory array at address ADD2 and ADD3 is provided as the “DW 2,3”signal on LI/O signal 522 beginning at about time period (h). In variousembodiments, the DW 2,3 signal may be provided to the LI/O signal 522 bythe GWI/O signal 526, as shown beginning at about time period (h) on theGWI/O signal 526.

As shown in FIG. 5, between time the stored data associated with ADD2and ADD3 is read beginning at about time period (e) and the time whenthe data to be stored at ADD2 and ADD3 is written to the memory arraybeginning at about time period (h), two other column cycle operationshave occurred, including the write 0,1 operation beginning at about timeperiod (f), and the read 4,5 operation beginning at about time period(g).

As shown in FIG. 5, additional data, such as data D6 and D7, along withadditional associated addresses and associated data mask inputs, may bereceived and processed in a interleaved manner as described above withrespect to data D0 and D1, and D2 and D3, and data D4 and D5.

As should be understood from FIG. 5 and from the description providedabove, data may be received on each transition of a clock signal, forexample clock signal 502, substantially without interruption and whileperforming a read/modify/write process on each of the received data,even when the read/modify/write process requires a time period thatexceeds the time period of a single cycle (two transitions) of the clocksignal. By dividing the read/modify/write process for each piece ofreceived data into a first read half and a second write half, and byinterleaving the first read half and the second write half with at leasta read half from another piece of received data, or at least a writehalf from another piece of received data, or both a read half and awrite half from one or more other data, the read/modify/write processmay be completed at clock rate used for a simple read or write operationthat does not include error correction codes, or data maskingoperations, or both, without interrupting the rate of receiving thedata. This is accomplished in part by operating the column select signalat a rate of at least twice the cycle rate of the clock signal, and byperforming the read/modify/write operation for any one piece of datainterleaved with the read/modify/write procedure for other receiveddata.

As shown in FIG. 5, the data transfer for the data read from and writtento the memory array may be done using the LI/O signal 522. In someembodiment, the data read for memory array may be transferred using theGRI/O signal 524. In some embodiments, the data written to the memoryarray may be transferred using the GWI/O signal 526.

As shown in FIG. 5 about time period (l), the last data write to thememory array involving the data associated with data D6 and D7 is begun.Within a half clock cycle at about time period (m), a read request isreceived, wherein data may to be read from the memory and provided as anoutput from the memory array.

FIG. 6 is a flow diagram illustrating several methods according tovarious embodiments of the invention.

Method 600 may include at block 610 receiving a plurality of data burststo be written to a memory array on a corresponding plurality ofconsecutive clock cycles.

In some embodiments, receiving a plurality of data bursts may includereceiving a first plurality of data bits following a first clock cycletransition of a plurality of consecutive clock cycle transitions, thefirst plurality of data bits to be written to at least one portion of agroup of data bits stored at a first address in a memory array.

In some embodiments, receiving a plurality of data bursts may includereceiving a second plurality of data bits following a second clock cycletransition of the plurality of consecutive clock cycle transitions, thesecond plurality of data bits to be written to at least one portion of agroup of data bits stored at a second address in the memory array.

In some embodiments, receiving the second plurality of data bitsincludes: following the second clock cycle transition and before afourth clock cycle transition of the plurality of consecutive clockcycle transitions, reading at the second address a second group ofstored data bits to generate a second group of read data bits,generating a second group of write data bits by combining the secondplurality of data bits with the second group of read data bits,generating a second error correction code for the second group of writedata bits, and writing the second group of write data bits to the secondaddress.

Method 600 may include at block 620 performing a read/modify/writeprocess for each of the plurality of data bursts, which may includeperforming the read/modify/write process within a time period no longerthan a period of two cycles of the corresponding plurality ofconsecutive clock cycles.

In some embodiments, performing the read/modify/write process includesdetermining an address in the memory array to which a particular databurst being processed is to be written and reading from the address aplurality of stored data bits.

In some embodiments, performing the read/modify/write process includesreceiving a data mask associated with the particular data burst beingprocessed, and providing a modified plurality of data bits by includingin the modified plurality of data bits any bits from the plurality ofstored data bits for which the data mask has been set and any bits fromthe particular data burst being processed for which the data mask hasnot been set.

In some embodiments, performing the read/modify/write process includesgenerating an error correction code for the modified plurality of databits. In some embodiments, performing the read/modify/write processincludes writing the modified plurality of data bits to the address inthe memory array and writing the error correction code to the memoryarray. In some embodiments, writing the error correction code to thememory array includes writing the error correction code to the addressin memory array. In some embodiments, writing the error correction codeto the memory array includes writing the error correction code to adifferent address in the memory array.

In some embodiments, performing the read/modify/write process includesfollowing the first clock cycle transition and before a third clockcycle transition of the plurality of consecutive clock cycletransitions: reading at the first address a first group of stored databits to generate a first group of read data bits, generating a firstgroup of write data bits by combining the first plurality of data bitswith the first group of read data bits, generating a first errorcorrection code for the first group of write data bits, and writing thefirst group of write data bits to the first address.

In various embodiments, reading at the first address may includeproviding the first address on a plurality of address lines of thememory array and storing the data at the first address provided on aplurality of local input/output lines. In various embodiments, storingthe data may include gating the data stored at the first address fromthe local input/output lines to a plurality of global input/outputlines.

In various embodiments, generating a first group of write data bits mayinclude receiving the first group of write data bits, receiving an errorcode representing a status of the first write group of write data bitsat about a time the first group of write data bits was written to thedynamic random access memory array, and determining if any one of thebits included in the first group of write data bits includes an errorbased on the error code representing a status of the first group ofwrite data bits. Various embodiments may include correcting an error inany one of a plurality of data bits included in the first group of writedata bits.

In various embodiments, generating the first group of write data bitsmay include receiving one or more masking inputs, each masking inputassociated with a selected portion of the first group of read data bits,and masking the first group of write data bits by including in the firstgroup of write data bits each of the selected portion of the first readgroup of data bits for which the one or more masking inputs indicates amasking status has been set. Various embodiments may include having inthe first group of write data bits each of a selected portion of thefirst plurality of data bits for which the one or more masking inputsindicates that the masking status has not been set.

In various embodiments, generating a first error code may includegenerating a Hamming code based on the first group of write data bits.In various embodiments, writing the first group of write data bits mayinclude writing a plurality of error code bits representing thegenerated first error code for the first group of write data bits to thefirst address. In various embodiments, writing the first write group ofdata bits may include writing the first error code to a first errorcorrection code address associated with the first address, wherein thefirst error correction code address is a different address from thefirst address.

In various embodiments, performing a read/modify/write process mayinclude providing a first data burst during a first clock cycle andproviding a second data burst during a second and consecutive clockcycle, and within a time period no longer than an interval defined bythe first clock cycle and the second clock cycle: providing at a localinput/output a first plurality of data bits associated with a wordlineand a first plurality of column select lines coupled to an array of amemory cells, gating the first plurality of data bits to a global readinput/output from the local input/output, clearing the first pluralityof data bits from the local input/output after gating the firstplurality of data bits to the global read input/output, providing at thelocal input/output a second plurality of data bits associated with thewordline and a second plurality of column select lines coupled to thearray of memory cells, gating the second plurality of data bits to theglobal read input/output from the local input/output, clearing thesecond plurality of data bits from the local input/output after gatingthe second plurality of data bits to the global read input/output,providing a first plurality of write data bits including a plurality oferror correction code bits associated with the first plurality of writedata bits to a global write input/output, writing the first plurality ofwrite data bits including the error code bits to the array of memorycells associated with the wordline and the first plurality of columnselect lines through the local input/output after clearing the secondplurality of data bits from the local input/output.

Various embodiments may include the first clock cycle having a firstclock cycle transition and a second clock cycle transition. Providing ofthe first plurality of data bits, gating the first plurality of databits, and clearing the first plurality of data bits may occur during atime period between the first clock cycle transition and the secondclock cycle transition.

Various embodiments may include the second clock cycle having a thirdclock cycle transition and a fourth clock cycle transition. Providingthe second plurality of data bits, gating the second plurality of databits, and clearing the second plurality of data bits may occur during atime period between the third clock cycle transition and the fourthclock cycle transition.

In some embodiments, writing the first plurality of write data bits mayinclude during a time period between the fourth clock cycle transitionand an end of the second clock cycle transition: gating the firstplurality of write data bits and the error correction code bits from theglobal write input/output to the local input/output, writing the firstplurality of data bits and the error correction code bits to the arrayof memory cells from the local input/output, and clearing the firstplurality of data bits and the error correction code bits from the localinput/output.

Embodiments of the invention are not limited to any particular patternor order in which the various registers are written. It should beunderstood that other patterns of writing to registers, as determinedfor example by the instructions included in controller 204, and asincluded in devices supplying the external signals such as, but notlimited to, processor 102 may be used in writing to the registersincluded in various embodiments of the invention.

It is to be understood that the above description is intended to beillustrative and not restrictive. For example, the above-describedembodiments (and/or aspects thereof) may be used in combination witheach other. Many other embodiments will be apparent to those of skill inthe art upon reviewing the above description. The scope of the inventionshould, therefore, be determined with reference to the appended claims,along with the full scope of equivalents to which such claims areentitled. In the appended claims, the terms “including” and “in which”are used as the plain-English equivalents of the respective terms“comprising” and “wherein.” Also, in the following claims, the terms“including” and “comprising” are open-ended, that is, a system, device,article, or process that includes elements in addition to those listedafter such a term in a claim are still deemed to fall within the scopeof that claim. Moreover, in the following claims, the terms “first,”“second,” and “third,” etc. are used merely as labels, and are notintended to impose numerical requirements on their objects.

The Abstract of the Disclosure is provided to comply with 37 C.F.R.§1.72(b), requiring an abstract that will allow the reader to quicklyascertain the nature of the technical disclosure. It is submitted withthe understanding that it will not be used to interpret or limit thescope or meaning of the claims. In addition, in the foregoing DetailedDescription, various features may be grouped together to streamline thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the claimed embodiments require morefeatures than are expressly recited in each claim. Rather, as thefollowing claims reflect, inventive subject matter may lie in less thanall features of a single disclosed embodiment. Thus the following claimsare hereby incorporated into the Detailed Description, with each claimstanding on its own as a separate embodiment.

CONCLUSION

Various embodiments have been described herein as a mechanism foreffecting an internal read/modify/write process with respect to memorydevices including error correction codes and/or masking operations. Theprocess may be conducted internally, using an error correction modulecoupled to the memory array. In various embodiments, the memory deviceincludes DRAM, and by using error correction codes, the refresh timeinterval may be lengthened, thereby improving the overall performance ofthe memory device. In various embodiments, write operations may includedata masking so that a read/modify/write process can still be performedat a clock rate wherein the standard read/modify/write process may notbe capable of being performed within a single column cycle of the clockrate.

1. An apparatus comprising: an error code module configured to receive aplurality of data bursts and perform a read/modify/write process on eachof the plurality of data bursts within a time period no longer than aperiod of two consecutive clock cycles, wherein the error code module isfurther configured to interleave operations of the read/modify/writeprocesses such that read and write operations do not occursimultaneously.
 2. The apparatus of claim 1, wherein the error codemodule is further configured to perform modify and write operationssimultaneously.
 3. The apparatus of claim 1, wherein theread/modify/write process includes generating an error correction code.4. The apparatus of claim 1, further comprising: a clock circuit coupledto a processor and the error code module and configured to provide thetwo consecutive clock cycles to the error code module; and a half-cycleclock circuit coupled to the clock circuit and the error code module,the half-cycle clock circuit configured to provide a plurality of clockcycles at a faster rate than the clock circuit.
 5. The apparatus ofclaim 1, wherein the error code module is further configured tointerleave read operations, modify operations, and write operations. 6.The apparatus of claim 1, wherein the error code module comprises: adata combiner configured to generate a plurality of modified data burstscorresponding to the plurality of data bursts.
 7. The apparatus of claim6, wherein the data combiner is further configured to generate each ofthe plurality of modified data bursts based, at least in part, on arespective data mask signal.
 8. An error code module comprising: aninput data buffer configured to receive a plurality of data burstsduring a plurality of consecutive clock cycles; a data combinerconfigured to provide a plurality of modified data bursts responsive, atleast in part, to performing a read/modify/write process on each of theplurality of data bursts; a modified read data register configured toreceive each of the plurality of modified data bursts; and wherein eachread/modify/write process is based, at least in part, on a respectiveset of read data and is performed within a time period no longer than aperiod of two consecutive clock cycles.
 9. The error code module ofclaim 8, wherein each set of read data is coupled to the data combinerfrom a memory over a plurality of global I/O lines.
 10. The error codemodule of claim 8, further comprising: an error code computation unitcoupled to the modified read data register and configured to generate arespective error correction code based, at least in part, on each of theplurality of modified data bursts.
 11. The error code module of claim10, wherein the error code computation unit is further configured tostore each of the plurality error correction codes in an errorcorrection code register.
 12. The error code module of claim 10, whereinthe error code computation unit is further configured to determine ifone of the plurality of data bursts comprises an error, the error codecomputation unit further configured to correct the error responsive todetermining that the error is correctable.
 13. The error code module ofclaim 8, wherein each read/modify/write process comprises a modifyoperation, wherein each modify operation is based, at least in part, ona respective mask signal.
 14. The error code module of claim 8, whereinthe data combiner is further configured to interleave theread/modify/write processes performed on each of the plurality of databursts.
 15. A method, comprising: reading from a first address; afterreading from the first address, generating a first set of write data;reading from a second address; after reading from the second address,generating a second set of write data; after reading from the secondaddress, providing the first set of write data to a data bus; andwherein said reading from the first address and said providing the firstset of write data do not occur simultaneously, and said reading from thesecond address and said providing the first set of write data do notoccur simultaneously.
 16. The method of claim 15, wherein the first setof write data is based, at least in part, on a first plurality of datamask inputs and the second set of write data is based, at least in part,on a second plurality of data mask inputs.
 17. The method of claim 15,wherein said reading from the first address comprises: gating datacorresponding to the first address from a local bus to a global bus. 18.The method of claim 15, wherein said generating the first set of writedata comprises: combining the first set of read data and a data burst togenerate the first set of write data.
 19. The method of claim 15,wherein the first address is read during a first clock cycle and thesecond address is read during a second clock cycle, wherein the firstand second clock cycles are consecutive.
 20. The method of claim 15,further comprising: receiving an error correction code corresponding tothe first address; determining whether a first set of data correspondingto the first address includes an error; and correcting at least oneerror in the first set of data responsive to determining that the firstset of data includes an error.